CPH5524 no. a0859-1/8 62012 tkim/92607ea tiim tc-00000913 http:// semicon.sanyo.com/en/network ordering number : ena0859a applications ? relay drivers, lamp drivers, motor drivers, igbt gate drivers features ? composite type with a pnp transistor and an npn transistor contained in one package, facilitating high-density mounting ? ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) speci cations ( ): pnp absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)100 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)3 a collector current (pulse) i cp (--)6 a base current i b (--)600 ma collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 1unit 0.9 w total power dissipation p t mounted on a ceramic board (600mm 2 0.8mm) 1.2 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7017a-009 CPH5524 pnp/npn epitaxial planar silicon transistors high-current switching applications product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection CPH5524-tl-e 1 : collector (npn tr) 2 : collector (pnp tr) 3 : base (pnp tr) 4 : emitter common 5 : base (npn tr) sanyo : cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 3y lot no. tl 543 12 sanyo semiconductors data sheet
CPH5524 no. a0859-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe v ce =(--)2v, i c =(--)100ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (390)380 mhz output capacitance cob v cb =(--)10v, f=1mhz (24)13 pf collector-to-emitter saturation voltage v ce (sat)1 i c =(--)1a, i b =(--)50ma (--115) (--230) mv 90 130 mv v ce (sat)2 i c =(--)2a, i b =(--)100ma (--240) (--650) mv 160 240 mv base-to-emitter saturation voltage v be (sat) i c =(--)2a, i b =(--)100ma (--)0.88 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (30)35 ns storage time t stg (230)300 ns fall time t f (18)25 ns switching time test circuit ordering information device package shipping memo CPH5524-tl-e cph5 3,000pcs./reel pb free v r r b v cc =25v v be = --5v + + 50 input outpu t r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =1a for pnp, the polarit y is reversed.
CPH5524 no. a0859-3/8 [pnp] [npn] [pnp] [npn] [pnp] [npn] [pnp] [npn] i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a --5.0 --4.5 --4.0 --3.0 --3.5 --2.0 --2.5 --1.0 --1.5 --0.5 0 --0.4 0 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 5.0 4.5 4.0 3.0 3.5 2.0 2.5 1.0 1.5 0.5 0 0.4 0 0.8 1.2 1.6 2.0 0.2 0.6 1.0 1.4 1.8 it07258 it07259 --10ma --20ma --50ma --150ma --250ma --100ma i b =0ma --5ma 10ma 20ma 40ma 80ma 60ma 100ma i b =0ma 5ma --200ma 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v v ce = --2v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v v ce =2v it04566 it04567 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 25 c --25 c ta=75 c 25 c --25 c ta=75 c 7 100 2 3 5 7 1000 0.01 23 57 0.1 23 57 1.0 23 5 ta=75 c 25 c --25 c 5 7 100 2 3 5 7 1000 h fe -- i c --0.01 23 57 --0.1 23 57 --1.0 23 5 collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a dc current gain, h fe v ce = --2v v ce =2v it04568 it04569 ta=75 c 25 c --25 c 10 2 3 5 7 100 2 3 5 7 1000 0.01 23 57 0.1 23 57 1.0 23 5 3 5 7 100 2 3 5 7 1000 f t -- i c --0.01 23 57 --0.1 23 57 --1.0 23 5 collector current, i c -- a gain-bandwidth product, f t -- mhz f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz v ce = --10v v ce =10v it04570 it04571
CPH5524 no. a0859-4/8 [pnp] [npn] [pnp] [npn] [pnp] [npn] [pnp] [npn] 0.01 23 57 0.1 23 57 1.0 23 57 10 5 7 10 2 3 5 7 100 10 2 3 5 7 100 2 3 5 0.1 23 57 1.0 23 57 10 23 57 100 --10 2 --100 2 3 5 7 --1000 3 5 7 2 3 5 v ce (sat) -- i c --0.01 23 57 --0.1 23 57 --1.0 23 57 --10 v ce (sat) -- i c i c / i b =20 i c / i b =20 it04574 it04575 10 2 3 5 7 100 cob -- v cb --1.0 23 57 --10 23 57 --100 collector-to-base voltage, v cb -- v output capacitance, cob -- pf f=1mhz it04572 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf f=1mhz it04573 ta=75 c --25 c 25 c --25 c 25 c ta=75 c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv 0.01 23 57 0.1 23 57 1.0 23 5 10 2 3 5 7 100 2 3 5 7 3 5 7 1.0 2 3 0.01 23 57 0.1 23 57 1.0 23 57 10 ta= --25 c 75 c 3 5 7 --1.0 2 3 v be (sat) -- i c --0.01 23 57 --0.1 23 57 --1.0 23 57 --10 v be (sat) -- i c it04578 it04579 ta= - -25 c 75 c --10 2 --100 2 3 5 7 --1000 3 5 7 2 3 5 7 v ce (sat) -- i c --0.01 23 57 --0.1 23 57 --1.0 23 57 --10 v ce (sat) -- i c i c / i b =50 i c / i b =50 i c / i b =50 i c / i b =50 it04576 it04577 ta=75 c - -25 c 25 c ta=75 c --25 c 25 c 25 c 25 c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v
CPH5524 no. a0859-5/8 [pnp / npn] a s o collector-to-emitter voltage, v ce -- v collector current, i c -- a p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w [pnp / npn] it12617 0 0 20 40 60 80 100 120 140 160 0.6 1.2 0.4 0.2 0.9 0.8 1.0 1.4 total dissipation 1unit mounted on a ceramic board (600mm 2 ? 0.8mm) it12616 0.01 0.1 2 3 5 7 1.0 2 3 5 7 2 3 5 7 10 0.1 23 57 1.0 23 57 10 23 57 100 <50 s 500 s 100ms 1ms dc operation i cp =6a i c =3a 100 s 10ms ta=25 c single pulse for pnp minus sign is omitted mounted on a ceramic board (600mm 2 ? 0.8mm)
CPH5524 no. a0859-6/8 embossed taping speci cation CPH5524-tl-e
CPH5524 no. a0859-7/8 outline drawing land pattern example CPH5524-tl-e mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
CPH5524 ps no. a0859-8/8 this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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